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www.irf.com 1 12/16/08 irlr8259pbfIRLU8259pbf hexfet power mosfet notes through are on page 11 applicationsbenefits d-pak irlr8259pbf i-pak IRLU8259pbf gds gate drain source high frequency synchronous buck converters for computer processor power high frequency isolated dc-dc converters with synchronous rectification for telecom and industrial use very low rds(on) at 4.5v v gs ultra-low gate impedance fully characterized avalanche voltage and current lead-free rohs compliant
v dss r ds(on) max qg 25v 8.7m ? 6.8nc absolute maximum ratings parameter units v ds drain-to-source voltage v v gs gate-to-source voltage i d @ t c = 25c continuous drain current, v gs @ 10v i d @ t c = 100c continuous drain current, v gs @ 10v a i dm pulsed drain c urrent p d @t c = 25c maximum power dissipation w p d @t c = 100c maximum power dissipation linear derating factor w/c t j operating junction and c t stg storage temperature range soldering temperature, for 10 seconds thermal resistance parameter typ. max. units r jc junction-to-case CCC 3.15 r ja junction-to-ambient ( p c b mount ) CCC 50 c/w r ja junction-to-ambient CCC 110 48 max. 57 40 230 20 25 0.32 24 300 (1.6mm from case) -55 to + 175 downloaded from: http:///

2 www.irf.com static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 25 CCC CCC v ? v dss / ? t j breakdown voltage temp. coefficient CCC 18 CCC mv/c r ds(on) static drain-to-source on-resistance CCC 6.3 8.7 CCC 10.6 12.9 v gs(th) gate threshold voltage 1.35 1.90 2.35 v ? v gs(th) / ? t j gate threshold voltage coefficient CCC -7.1 CCC mv/c i dss drain-to-source leakage current CCC CCC 1.0 CCC CCC 150 i gss gate-to-source forward leakage CCC CCC 100 gate-to-source reverse leakage CCC CCC -100 gfs forward transconductance 55 CCC CCC s q g total gate charge CCC 6.8 10 q gs1 pre-vth gate-to-source charge CCC 1.5 CCC q gs2 post-vth gate-to-source charge CCC 1.1 CCC nc q gd gate-to-drain charge CCC 2.4 CCC q godr gate charge overdrive CCC 1.8 CCC see fig. 16 q sw switch charge (q gs2 + q gd ) CCC 3.5 CCC q oss output charge CCC 5.9 CCC nc r g gate resistance CCC 2.2 3.6 ? t d(on) turn-on delay time CCC 8.4 CCC t r rise time CCC 38 CCC t d(off) turn-off delay time CCC 9.1 CCC t f fall time CCC 8.9 CCC c iss input capacitance CCC 900 CCC c oss output capacitance CCC 300 CCC c rss reverse transfer capacitance CCC 110 CCC avalanche characteristics parameter units e as single pulse avalanche energy mj i ar avalanche current a e ar repetitive avalanche energy mj diode characteristics parameter min. typ. max. units i s continuous source current CCC CCC (body diode) i sm pulsed source current CCC CCC (body diode) v sd diode forward voltage CCC CCC 1.0 v t rr reverse recovery time CCC 17 26 ns q rr reverse recovery charge CCC 15 23 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) mosfet symbol CCC v gs = 4.5v typ. CCC CCC i d = 17a v gs = 0v v ds = 13v r g = 1.8 ? t j = 25c, i f = 17a, v dd = 13v di/dt = 200a/s t j = 25c, i s = 17a, v gs = 0v showing the integral reverse p-n junction diode. v ds = 13v, i d = 17a v ds = 16v, v gs = 0v v dd = 13v, v gs = 4.5v i d = 17a v ds = 13v conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 21a v gs = 4.5v, i d = 17a v gs = 20v v gs = -20v v ds = v gs , i d = 25a v ds = 20v, v gs = 0v v ds = 20v, v gs = 0v, t j = 125c conditions 4.8 see fig. 14 max. 6717 ? = 1.0mhz m ? 56 230 ana ns pf a downloaded from: http:///

www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 1 2 3 4 5 6 7 8 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 175c v ds = 15v 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 21a v gs = 10v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.5v 60s pulse width tj = 175c vgs top 10v 4.5v 3.7v 3.5v 3.3v 3.0v 2.7v bottom 2.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 4.5v 3.7v 3.5v 3.3v 3.0v 2.7v bottom 2.5v 60s pulse width tj = 25c 2.5v downloaded from: http:///

4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 012345678 q g , total gate charge (nc) 0.0 1.0 2.0 3.0 4.0 5.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 20v v ds = 13v i d = 17a 0.0 0.5 1.0 1.5 2.0 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 0 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) tc = 25c tj = 175c single pulse 100sec 1msec 10msec downloaded from: http:///

www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10. threshold voltage vs. temperature 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 ri (c/w) i (sec) 0.08148 0.0000170.88089 0.000107 1.48814 0.001018 0.69949 0.006290 -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 0.5 1.0 1.5 2.0 2.5 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 25a 25 50 75 100 125 150 175 t c , case temperature (c) 0 10 20 30 40 50 60 i d , d r a i n c u r r e n t ( a ) limited by package downloaded from: http:///

6 www.irf.com d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13. gate charge test circuit fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as fig 12c. maximum avalanche energy vs. drain current r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs v ds 90%10% v gs t d(on) t r t d(off) t f
1 0.1 % + - fig 14a. switching time test circuit fig 14b. switching time waveforms 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 50 100 150 200 250 300 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 4.2a 6.4a bottom 17a downloaded from: http:///

www.irf.com 7 fig 15.

for n-channel hexfet power mosfets

? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period
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& fig 16. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr downloaded from: http:///

8 www.irf.com

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www.irf.com 9

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1234 note: for the most current drawing please refer to ir website at http://www.irf.com/package/ downloaded from: http:///

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tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch note: for the most current drawing please refer to ir website at http://www.irf.com/package/ downloaded from: http:///

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repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.48 mh, r g = 25 ? , i as = 17a. pulse width 400s; duty cycle 2%. calculated continuous current based on maximum allowable junction temperature. package limitation current is 42a. when mounted on 1" square pcb (fr-4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994. data and specifications subject to change without notice. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-790 visit us at www.irf.com for sales contact information.12/08 note form quantity irlr8259pbf d-pak tube/bulk 75 irlr8259trpbf d-pak tape and reel 2000 IRLU8259pbf i-pak tube/bulk 75 orderable part number package type standard pac k ! "#$%%!!! &%# ' %( )" * &( " " " " *& + ( # " & $ "#$%%!!! &%!" '%#% ,## -../ " & # ms l 1 (per je de c j-s t d-020d ??? ) i-pak not applicable rohs compliant moisture sensitivity level d-pak yes qualification information ? qualification level industrial?? (per jedec jesd47f??? guidelines) comments: this family of products has passed jedecs industrial qualification. irs consumer qualification level is granted by extension of the higher industrial level. downloaded from: http:///

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